Stanene cyanide: a novel candidate of Quantum Spin Hall insulator at high temperature

نویسندگان

  • Wei-xiao Ji
  • Chang-wen Zhang
  • Meng Ding
  • Ping Li
  • Feng Li
  • Miao-juan Ren
  • Pei-ji Wang
  • Shu-jun Hu
  • Shi-shen Yan
چکیده

The search for quantum spin Hall (QSH) insulators with high stability, large and tunable gap and topological robustness, is critical for their realistic application at high temperature. Using first-principle calculations, we predict the cyanogen saturated stanene SnCN as novel topological insulators material, with a bulk gap as large as 203 meV, which can be engineered by applying biaxial strain and electric field. The band topology is identified by Z2 topological invariant together with helical edge states, and the mechanism is s-pxy band inversion at G point induced by spin-orbit coupling (SOC). Remarkably, these systems have robust topology against chemical impurities, based on the calculations on halogen and cyano group co-decorated stanene SnXxX'1-x (X,X'  =  F, Cl, Br, I and CN), which makes it an appropriate and flexible candidate material for spintronic devices.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Room Temperature Quantum Spin Hall Insulator in Ethynyl-Derivative Functionalized Stanene Films

Quantum spin Hall (QSH) insulators feature edge states that topologically protected from backscattering. However, the major obstacles to application for QSH effect are the lack of suitable QSH insulators with a large bulk gap. Based on first-principles calculations, we predict a class of large-gap QSH insulators in ethynyl-derivative functionalized stanene (SnC2X; X = H, F, Cl, Br, I), allowing...

متن کامل

Quantum Spin Hall States in Stanene/Ge(111)

For topological insulators to be implemented in practical applications, it is a prerequisite to select suitable substrates that are required to leave insulators' nontrivial properties and sizable opened band gaps (due to spin-orbital couplings) unaltered. Using ab initio calculations, we predict that Ge(111) surface qualified as a candidate to support stanene sheets, because the band structure ...

متن کامل

Dumbbell stanane: a large-gap quantum spin hall insulator.

A quantum spin Hall (QSH) effect is quite promising for applications in spintronics and quantum computations, but at present, can only be achieved at ultralow temperatures. The determination of large-gap QSH insulators is critical to increase the operating temperature. By using first-principles calculations, we demonstrate that the stable hydrogenated stanene with a dumbbell-like structure (DB ...

متن کامل

Exploring Ag(111) Substrate for Epitaxially Growing Monolayer Stanene: A First-Principles Study

Stanene, a two-dimensional topological insulator composed of Sn atoms in a hexagonal lattice, is a promising contender to Si in nanoelectronics. Currently it is still a significant challenge to achieve large-area, high-quality monolayer stanene. We explore the potential of Ag(111) surface as an ideal substrate for the epitaxial growth of monolayer stanene. Using first-principles calculations, w...

متن کامل

Quantum spin Hall phases

We review our recent theoretical works on the the quantum spin Hall effect. First we compare edge states in various 2D systems, and see whether they are robust or fragile against perturbations. Through the comparisons we see the robust nature of edge states in 2D quantum spin Hall phases. We see how it is protected by the Z2 topological number, and reveal the nature of the Z2 topological number...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 5  شماره 

صفحات  -

تاریخ انتشار 2015